The IXBF55N300 is a high-voltage, high-gain BIMOSFET designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It is packaged in an ISOPLUS i4-Pak with an isolated mounting surface, weighing 5 g. The device has a collector-emitter breakdown voltage of 3000 V and can handle a continuous collector current of 34 A at 110°C and a peak collector current of 600 A for 1 ms. It features a low saturation voltage of 2.7 to 3.2 V at 55 A and 15 V gate-emitter voltage, 4000 V electrical isolation, and thermal resistance from junction to case of 0.35 °C/W. The part is qualified for operation from -55°C to 150°C and meets RoHS standards. The ISOPACK i4-Pak configuration integrates an electrically isolated tab and a silicon chip on direct-copper bond substrate for high power density and low gate drive requirements.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
IGBT Transistors High Voltage High Gain BIMOSFET Product overview: IXBF55N300 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBF55N300 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBF55N300 | 279-IXBF55N300 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs | IGBT Transistor |
| VCES | 3000 volts |
