The IXBL64N250 is a monolithic bipolar MOS transistor designed for high-voltage switching applications, featuring a 2500 V collector-emitter blocking voltage and a continuous collector current of 46 A at 110°C. It is packaged in an ISOPLUS i5-PakTM with an electrically isolated tab, measuring 26.42 mm in length, 20.83 mm in width, and 8.21 mm in height, and weighs 8 g. The device has a low gate drive requirement, low switching losses, and an anti-parallel diode, with a maximum junction temperature of 150°C and a thermal resistance from junction to case of 0.15 °C/W. It supports clamped inductive switching with a safe operating area of 160 A at 1250 V and 10 μs.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBL64N250 |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 2500 volts |
