Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB44N100P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFB44N100P is a 1000 V, 44 A N-channel enhancement mode MOSFET with a 220 mΩ on-resistance, designed for high-power switching applications such as AC and DC motor controls, switched-mode power supplies, and laser drivers. It is packaged in a PLUS TO-264 case, measuring 25.58-26.59 mm by 19.30-20.29 mm, with a drain tab for clip or spring mounting. The device supports an avalanche energy of 2 J at 25°C and a maximum junction temperature of 150°C. It has a thermal resistance junction-to-case of 0.10 °C/W and includes a fast intrinsic rectifier with a reverse recovery time of 300 ns. The part is avalanche rated and meets RoHS standards.

Datasheet Summary
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The IXFB44N100P is a 1000 V, 44 A N-channel enhancement mode MOSFET with a 220 mΩ on-resistance, designed for high-power switching applications such as AC and DC motor controls, switched-mode power supplies, and laser drivers. It is packaged in a PLUS TO-264 case, measuring 25.58-26.59 mm by 19.30-20.29 mm, with a drain tab for clip or spring mounting. The device supports an avalanche energy of 2 J at 25°C and a maximum junction temperature of 150°C. It has a thermal resistance junction-to-case of 0.10 °C/W and includes a fast intrinsic rectifier with a reverse recovery time of 300 ns. The part is avalanche rated and meets RoHS standards.

Suppliers

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Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFB44N100P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFB44N100P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB44N100P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 44A 1000V 0.22ohm MOSFET Transistor
278-IXFB44N100P
N-Channel 44A 1000V 0.22ohm MOSFET Transistor 278-IXFB44N100P
Power Field-Effect Transistor, 44A I(D), 1000V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264-3 Product overview: IXFB44N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 44A, 1000V, 0.22ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 44A, 1000V, 0.22ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB44N100P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 44A I(D), 1000V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264-3 Product overview: IXFB44N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 44A, 1000V, 0.22ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 44A, 1000V, 0.22ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFB44N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFB44N100P 278-IXFB44N100P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 44A 1000V 0.22ohm MOSFET Transistor
Polarity N-Channel
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