The IXFH14N60P is an N-channel enhancement mode power MOSFET rated for 600 V drain-source voltage and 14 A continuous drain current, housed in a TO-247 package. It features a drain-source on-resistance of 550 mΩ at 25°C, an avalanche energy rating of 900 mJ, and a maximum power dissipation of 300 W. The device is avalanche rated, has low package inductance, and a fast intrinsic body diode with a reverse recovery charge of 600 nC. Thermal resistance from junction to case is 0.21 °C/W. It meets international standard package specifications and is designed for switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH14N60P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
