The IXFH6N120 is an N-channel enhancement mode MOSFET designed for high-voltage switching applications, rated for 1200 V drain-source voltage and 6 A continuous drain current. It is packaged in a TO-247 AD case with dimensions of 21.46 mm length, 16.26 mm width, and 5.72 mm lead spacing, weighing 6 g. The device features a maximum on-resistance of 2.6 Ω at 25°C, an avalanche energy rating of 500 mJ, and an operating junction temperature range of -55°C to 150°C. It is avalanche rated, has low package inductance, and supports unclamped inductive switching. The part meets RoHS standards and is designed for high power density with easy mounting and space savings.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH6N120 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
