Littelfuse, Inc. Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDH20N120 IXDH20N120

Description
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages
Description
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages
Datasheet
Datasheet Summary
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The IXDH20N120 is a 1200 V NPT IGBT with a 38 A continuous collector current rating, designed for applications such as AC motor control and UPS systems. It is packaged in a TO-247 AD case with dimensions of 21.46 mm maximum length, 16.26 mm maximum width, and 5.72 mm maximum height. The device has a typical collector-emitter saturation voltage of 2.4 V at 20 A and a maximum junction temperature of 150 ⁰C. It features a square reverse-biased safe operating area (RBSOA), a positive temperature coefficient for easy paralleling, and optional integrated ultrafast diode. Thermal resistance from junction to case is 0.63 K/W for the IGBT. Mounting torque is specified at 0.8 to 1.2 Nm.

Datasheet Summary
Powered by GS/AI

The IXDH20N120 is a 1200 V NPT IGBT with a 38 A continuous collector current rating, designed for applications such as AC motor control and UPS systems. It is packaged in a TO-247 AD case with dimensions of 21.46 mm maximum length, 16.26 mm maximum width, and 5.72 mm maximum height. The device has a typical collector-emitter saturation voltage of 2.4 V at 20 A and a maximum junction temperature of 150 ⁰C. It features a square reverse-biased safe operating area (RBSOA), a positive temperature coefficient for easy paralleling, and optional integrated ultrafast diode. Thermal resistance from junction to case is 0.63 K/W for the IGBT. Mounting torque is specified at 0.8 to 1.2 Nm.

Suppliers

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Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDH20N120 - IXDH20N120 - Littelfuse, Inc.
Rosemont, IL, United States
Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDH20N120
IXDH20N120
Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDH20N120 IXDH20N120
D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages

D-series IGBTs are NPT (Non-Punch Through) devices making them ideal for paralleling. They feature low switching losses with low tail current while providing short circuit capabilities. This D-series family also offers a square reverse bias safe operating area (RBSOA) feature that improves clamped inductive load current, allowing the device to safely switch in a snubberless hard switching application. NPT IGBT technology Low saturation voltage Low switching losses Square RBSOA, no latch up High short circuit capability Positive temperature coefficient for easy paralleling MOS input, voltage controlled Optional ultra fast diode International standard packages

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXDH20N120
Product Name Power Semiconductors & Control ICs - IGBTs - NPT - Series: Standard - IXDH20N120
VCES 1200 volts
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