IXBN75N170A is a 1700 V bipolar MOS transistor (BiMOSFET) designed for high-power switched-mode and resonant-mode power supplies, UPS, and AC motor drives. It is packaged in an SOT-227B miniBLOC case, weighing 30 g. The device handles a continuous collector current of 42 A at 90°C and up to 75 A at 25°C, with a clamped inductive current capability of 350 A for 1 ms. It features a low on-state collector-emitter voltage of 5.15 V at 125°C and 42 A, and an integrated anti-parallel diode with a forward voltage of 5.5 V. The device has a thermal resistance from junction to case of 0.20 °C/W and can operate from -55°C to 150°C. It complies with UL 94 V-0 flammability rating and is rated for 3000 V isolation voltage. Mounting torque is specified as 1.5 Nm (13 lb.in.).
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBN75N170A |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
