The IXBK64N250 is a high-voltage BiMOSFET transistor designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, and capacitor discharge circuits. It is packaged in a TO-264 case with a weight of 10 g and features a continuous collector current rating of 64 A at 110°C and a collector-emitter voltage blockade of 2500 V. The device has a collector-emitter saturation voltage of 3.0 V at 25°C, a maximum junction temperature of 150°C, and thermal resistance from junction to case of 0.17 °C/W. It incorporates an anti-parallel diode with a forward voltage of 3.0 V and a reverse recovery time of 160 ns. The gate-emitter voltage is rated for continuous ±25 V and transient ±35 V, with a gate charge of 400 nC. Mounting torque for the TO-264 package is 1.13 Nm (10 lb.in.).
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
Insulated Gate Bipolar Transistor, Product overview: IXBK64N250 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBK64N250 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | DigiKey | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBK64N250 | 279-IXBK64N250 | 1294-IXBK64N250-CHP |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs | IGBT Transistor | Single IGBTs |
| VCES | 2500 volts |
