The IXFA5N50P3 is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-263 case with a drain tab and measures 2.50 g. The device has a maximum drain-source voltage of 500 V, continuous drain current of 5 A at 25°C, and a maximum drain-source on-state resistance of 1.65 Ω at 10 V gate-source voltage. It is avalanche rated with an energy rating of 100 mJ and features a fast intrinsic rectifier. The gate-source voltage is limited to ±30 V continuous and ±40 V transient. Thermal resistance from junction to case is 1.10 °C/W. The part meets international standard package requirements and is rated for operation from -55 °C to 150 °C junction temperature. It is qualified to AEC-Q200 and RoHS standards.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA5N50P3 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Polar3™ - IXFA5N50P3 |
| Polarity | N-Channel |
