The IXFB50N80Q2 is an N-channel enhancement mode power MOSFET designed for high-frequency switch-mode and resonant-mode power supplies, DC-DC converters, and pulse generation. It is packaged in a PLUS264 case with a weight of 10 g and a maximum junction temperature of 150°C. The device has a drain-source voltage rating of 800 V, a continuous drain current of 50 A, and a drain-source on-state resistance of 160 mΩ at 25°C. It features avalanche rating with 5 J energy, a fast intrinsic rectifier with reverse recovery time of 300 ns, and a low gate charge of 260 nC. The thermal resistance junction-to-case is 0.11 °C/W. The part meets AEC-Q200 qualification and RoHS standards.
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB50N80Q2 |
| Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
