Littelfuse, Inc. 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB50N80Q2

Description
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
Datasheet
Description
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFB50N80Q2 - Littelfuse, Inc.
Rosemont, IL, United States
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFB50N80Q2
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFB50N80Q2
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance

Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number IXFB50N80Q2
Product Name 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR - ALD210802SCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC16
View Details
4 suppliers
Transistor - 4700471 - Radwell International
Allen-Bradley / Rockwell Automation
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-16QB-QZ - Nexperia B.V.
Specs
Transistor Type BJT
Package Type SOT8015
View Details
3 suppliers