Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA5N100P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFA5N100P is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and uninterruptible power supplies. It is packaged in a TO-263 case with a weight of 2.5 g and features an avalanche-rated structure, a low on-resistance of 2.8 Ω at VGS = 10 V, and a drain-to-source voltage rating of 1000 V. The device supports a continuous drain current of 5 A at 25°C and has a gate threshold voltage range of 3.0 to 6.0 V. It includes a fast intrinsic diode with a reverse recovery time of 200 ns and meets the RoHS standard. The package offers low drain-to-tab capacitance and low package inductance for improved switching performance.

Datasheet Summary
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The IXFA5N100P is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and uninterruptible power supplies. It is packaged in a TO-263 case with a weight of 2.5 g and features an avalanche-rated structure, a low on-resistance of 2.8 Ω at VGS = 10 V, and a drain-to-source voltage rating of 1000 V. The device supports a continuous drain current of 5 A at 25°C and has a gate threshold voltage range of 3.0 to 6.0 V. It includes a fast intrinsic diode with a reverse recovery time of 200 ns and meets the RoHS standard. The package offers low drain-to-tab capacitance and low package inductance for improved switching performance.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA5N100P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFA5N100P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA5N100P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
1KV 5A MOSFET Transistor
278-IXFA5N100P
1KV 5A MOSFET Transistor 278-IXFA5N100P
Trans MOSFET N-CH 1KV 5A 3-Pin(2+Tab) D2PAK Product overview: IXFA5N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA5N100P can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 1KV 5A 3-Pin(2+Tab) D2PAK Product overview: IXFA5N100P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1KV, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1KV, 5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFA5N100P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA5N100P 278-IXFA5N100P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) 1KV 5A MOSFET Transistor
Polarity N-Channel
Package Type TO-263; TO-263
MOSFET Operating Mode Enhancement
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