The IXBX75N170 is a 1700 V, 75 A bipolar MOS transistor in a PLUS247 package, designed for high-power switching applications such as AC motor drives, UPS systems, and resonant-mode power supplies. It features an integrated anti-parallel diode, low gate drive requirements, and a maximum collector current of 75 A at 110 °C with a peak pulsed current of 580 A. The device has a collector-emitter saturation voltage of 2.6 to 3.1 V at 15 V gate bias and 75 A collector current. Thermal resistance from junction to case is 0.12 °C/W, and the maximum junction temperature is 150 °C. The package weighs 6 g and supports mounting forces of 20 to 120 N. It is rated for operation from -55 °C to 150 °C and meets RoHS standards.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
Insulated Gate Bipolar Transistor, Product overview: IXBX75N170 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBX75N170 can be used for catalog matching and distributor lookup.
| Littelfuse, Inc. | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBX75N170 | 279-IXBX75N170 |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs | IGBT Transistor |
| VCES | 1700 volts |
