The IXFH60N65X2-4 is an N-channel enhancement mode Power MOSFET for switch-mode power supplies, motor drives, and PFC circuits. It is packaged in a TO-247-4L case weighing 6 g. The device has a 650 V drain-source breakdown voltage and a continuous drain current of 60 A at 25 °C, with a pulsed current capability of 120 A. Its on-state resistance is 52 mΩ at 10 V gate voltage and 30 A drain current. The MOSFET is avalanche rated with a 2.5 J energy rating, features a fast intrinsic diode with 180 ns reverse recovery time at 30 A, and has a gate input resistance of 0.8 Ω. Thermal resistance from junction to case is 0.16 °C/W. Operating junction temperature ranges from -55 °C to 150 °C.
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH60N65X2-4 |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
