The IXFK170N20P is an N-channel enhancement mode Power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-264 case, measuring 26.16 mm in length and 19.96 mm in width, with a weight of 10 g. The device has a drain-source breakdown voltage of 200 V, a continuous drain current of 170 A at 25°C, and a maximum drain-source on-resistance of 14 mΩ at 10 V gate-source voltage. It features an avalanche-rated structure, a fast intrinsic diode with reverse recovery charge of 200 nC at 85 A, and a low gate charge of 185 nC. Thermal resistance from junction to case is 0.12 °C/W. The part is rated for operation from -55 °C to +175 °C and meets thermally robust packaging standards with a maximum soldering temperature of 260 °C for 10 seconds.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK170N20P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
