The IXFH46N65X3 is a 650V N-channel enhancement mode MOSFET in a TO-247 package, rated for 46A continuous drain current and 520W power dissipation at 25°C. It features a maximum on-resistance of 73mΩ at 10V gate voltage and 25°C, with an avalanche energy rating of 1.2J. The device has a thermal resistance of 0.24°C/W from junction to case and a gate charge of 40nC. It includes a reverse recovery time of 165ns for the body diode and supports a maximum junction temperature of 150°C. The package has a mounting torque specification of 1.13 Nm and weighs 6g. The MOSFET is designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives.
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 46A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr) On-state resistance: RDS(ON) = 73mΩ Reverse recovery time: trr = 165ns Thermal resistance: RthJC = 0.24K/W Avalanche rating: EAS = 1.2J Gate charge: Qg = 40nC
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH46N65X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
