Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH16N50P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
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Datasheet
Datasheet Summary
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The IXFH16N50P3 is an N-channel enhancement mode power MOSFET in a TO-247 package, rated for 500 V drain-source voltage and 16 A continuous drain current. It features a maximum on-resistance of 360 mΩ at 10 V gate-source voltage, an avalanche energy rating of 300 mJ, and a fast intrinsic rectifier. The device is avalanche rated, has low gate charge and package inductance, and meets RoHS standards. It operates with a junction temperature range of -55 °C to 150 °C and has a thermal resistance junction-to-case of 0.21 °C/W.

Datasheet Summary
Powered by GS/AI

The IXFH16N50P3 is an N-channel enhancement mode power MOSFET in a TO-247 package, rated for 500 V drain-source voltage and 16 A continuous drain current. It features a maximum on-resistance of 360 mΩ at 10 V gate-source voltage, an avalanche energy rating of 300 mJ, and a fast intrinsic rectifier. The device is avalanche rated, has low gate charge and package inductance, and meets RoHS standards. It operates with a junction temperature range of -55 °C to 150 °C and has a thermal resistance junction-to-case of 0.21 °C/W.

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH16N50P3 - Littelfuse, Inc.
Rosemont, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH16N50P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH16N50P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFH16N50P3
MOSFET Transistor 278-IXFH16N50P3
Power Field-Effect Transistor, Product overview: IXFH16N50P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH16N50P3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFH16N50P3 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH16N50P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH16N50P3 278-IXFH16N50P3
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) MOSFET Transistor
Polarity N-Channel
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