The IXFH46N65X2W is an N-channel enhancement mode Power MOSFET rated for 650 V drain-source voltage and 46 A continuous drain current, with a maximum on-resistance of 69 mΩ at 10 V gate-source voltage. It is packaged in a TO-247 case, weighing 6 g, and features an avalanche-rated design with single-pulse avalanche energy of 1.3 J. Thermal resistance from junction to case is 0.19 K/W. The part meets IEC 60286-3 and RoHS standards and is suitable for switch-mode power supplies, motor drives, and PFC circuits.
Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Higher efficiency High power density Easy to mount Space savings
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH46N65X2W |
| Product Name | 24 V Bidirectional 250 W Discrete TVS Diode |
| Polarity | N-Channel |
