Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH46N30T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
Request a Quote
Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IXFH46N30T is an N-channel enhancement mode power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It comes in a TO-247 package, weighing 6 g, with a maximum drain-source voltage of 300 V and a continuous drain current of 46 A at 25°C. The device has a maximum on-state resistance of 80 mΩ at V°GS = 10 V, is avalanche rated, and features a fast intrinsic rectifier. It supports a junction temperature range of -55°C to +150°C and has a thermal resistance from junction to case of 0.27 °C/W. It meets international standard package specifications and is constructed with a plastic body rated for 260°C for 10 seconds during soldering.

Datasheet Summary
Powered by GS/AI

The IXFH46N30T is an N-channel enhancement mode power MOSFET designed for high-speed switching applications such as DC-DC converters, battery chargers, and AC motor drives. It comes in a TO-247 package, weighing 6 g, with a maximum drain-source voltage of 300 V and a continuous drain current of 46 A at 25°C. The device has a maximum on-state resistance of 80 mΩ at V°GS = 10 V, is avalanche rated, and features a fast intrinsic rectifier. It supports a junction temperature range of -55°C to +150°C and has a thermal resistance from junction to case of 0.27 °C/W. It meets international standard package specifications and is constructed with a plastic body rated for 260°C for 10 seconds during soldering.

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH46N30T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFH46N30T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH46N30T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFH46N30T
MOSFET Transistor 278-IXFH46N30T
Power MOSFET Product overview: IXFH46N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH46N30T can be used for catalog matching and distributor lookup.

Power MOSFET Product overview: IXFH46N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH46N30T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH46N30T 278-IXFH46N30T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

 - LM27222M - Rochester Electronics
Specs
Package Type SOIC8
Packing Method Tube; Tube
View Details
2 suppliers
 - 1EDI3031ASXUMA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type PG-DSO-2
Packing Method Tape Reel; Tape & Reel
View Details
Quad/Dual N-Channel Depletion Mode MOSFET Array/Pair - ALD114835SCL - Advanced Linear Devices, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Depletion; Precision Depletion Mode
V(BR)DSS 10 volts
View Details
3 suppliers