The IXFA26N50P3 is an N-channel enhancement mode power MOSFET with a 500 V drain-source breakdown voltage and 26 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is packaged in a TO-263 surface-mount case measuring 2.5 g in weight, with an RDS(on) of 250 mΩ at 25°C and a gate charge of 42 nC. The device features a fast intrinsic rectifier, avalanche capability, and low package inductance. It meets the AEC-Q200 qualification standard and is rated for junction temperatures from -55°C to 150°C with a maximum lead temperature for soldering of 300°C.
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA26N50P3 |
| Product Name | 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
