The IXFH30N60X is an N-channel enhancement mode MOSFET in a TO-247 package, rated for 600 V drain-source voltage and 30 A continuous drain current. It features a maximum on-state resistance of 155 mΩ at 10 V gate voltage, an avalanche energy rating of 1 J, and a peak pulsed current of 60 A. The device includes a fast intrinsic diode with a forward voltage of 1.4 V and reverse recovery charge of 860 nC, suitable for switch-mode and resonant-mode power supplies, DC-DC converters, and motor drives. It is avalanche rated, has low package inductance, and complies with international standard packages. The TO-247 package weighs 6.0 g and has a maximum lead temperature of 260 °C for 10 seconds. Thermal resistance from junction to case is 0.25 °C/W.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH30N60X |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel Ultra Junction - Series: X-Class - IXFH30N60X |
| Polarity | N-Channel |
