The IXFH70N65X3 is a 650V N-channel enhancement mode MOSFET in a TO-247 package, designed for high-efficiency switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It has a maximum continuous drain current of 70A at 25°C, a drain-source on-state resistance of 44 mΩ at 10V gate voltage, and an avalanche energy rating of 2.5 J. The gate charge is 66 nC, and the reverse recovery time of the body diode is 165 ns at 35A and -di/dt of 100 A/µs. Thermal resistance from junction to case is 0.16 °C/W. The device is avalanche rated, features low package inductance, and is qualified to operate from -55°C to 150°C. It meets RoHS standards.
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 70A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr) On-state resistance: RDS(ON) = 44mΩ Reverse recovery time: trr = 165ns Thermal resistance: RthJC = 0.16K/W Avalanche rating: EAS = 2.5J Gate charge: Qg = 66nC
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH70N65X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
