This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 70A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr)Features: On-state resistance: RDS(ON) = 44mΩ Reverse recovery time: trr = 165ns Thermal resistance: RthJC = 0.16K/W Avalanche rating: EAS = 2.5J Gate charge: Qg = 66nC Benefits: Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand
| Littelfuse, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFH70N65X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
| V(BR)DSS | 650 volts |
| IDSS | 70000 milliamps |
| rDS(on) | 0.0440 ohms |
