The IXFH26N100X is an N-channel enhancement mode power MOSFET designed for high-voltage switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-247 case, weighing 6 g, with a maximum drain-source voltage of 1000 V and a continuous drain current of 26 A at 25°C. The device has a maximum on-state resistance of 320 mΩ at 10 V gate voltage and 13 A drain current, and is avalanche rated with an energy rating of 2 J. It meets international standard package requirements and features low gate charge, low package inductance, and high power density. The junction temperature range is -55°C to 150°C, with a maximum case temperature for soldering of 260°C for 10 seconds. The part is rated for a maximum transient gate-source voltage of ±40 V and a maximum gate-source continuous voltage of ±30 V.
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH26N100X |
| Product Name | 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
