Littelfuse, Inc. N-channel depletion mode field effect transistors (FET) CPC3909

Description
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
Description
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
Datasheet
Datasheet Summary
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The CPC3909 is a 400V, N-channel depletion-mode FET with a typical on-resistance of 4.5 Ω at 25°C, available in SOT-89 and SOT-223 packages. It operates with a gate-to-source off voltage between -1.4 V and -3.1 V and handles a maximum drain current of 300 mA. The device has a maximum power dissipation of 1.1 W in the SOT-89 package and 2.5 W in the SOT-223 package, with junction-to-ambient thermal impedance of 90 °C/W and 55 °C/W respectively. It meets moisture sensitivity level MSL 1 and is ESD sensitive according to JESD-625. The part is rated for an operational temperature range of -40°C to +110°C and storage temperature from -40°C to +125°C.

Datasheet Summary
Powered by GS/AI

The CPC3909 is a 400V, N-channel depletion-mode FET with a typical on-resistance of 4.5 Ω at 25°C, available in SOT-89 and SOT-223 packages. It operates with a gate-to-source off voltage between -1.4 V and -3.1 V and handles a maximum drain current of 300 mA. The device has a maximum power dissipation of 1.1 W in the SOT-89 package and 2.5 W in the SOT-223 package, with junction-to-ambient thermal impedance of 90 °C/W and 55 °C/W respectively. It meets moisture sensitivity level MSL 1 and is ESD sensitive according to JESD-625. The part is rated for an operational temperature range of -40°C to +110°C and storage temperature from -40°C to +125°C.

Suppliers

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N-channel depletion mode field effect transistors (FET) - CPC3909 - Littelfuse, Inc.
Rosemont, IL, United States
N-channel depletion mode field effect transistors (FET)
CPC3909
N-channel depletion mode field effect transistors (FET) CPC3909
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Transistors
Product Number CPC3909
Product Name N-channel depletion mode field effect transistors (FET)
Polarity N-Channel
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