The IXFH15N60 is a 600 V N-channel enhancement mode Power MOSFET designed for high-efficiency switching applications such as DC-DC converters, synchronous rectification, and AC motor control. It comes in a TO-247 AD package measuring 20.32 mm maximum length, 21.46 mm maximum width, and 6.2 mm maximum height. The device has a maximum continuous drain current of 15 A at 25°C and a maximum pulsed drain current of 60 A. Its on-resistance is 0.50 Ω at 10 V gate voltage and 7.5 A drain current. The gate-source threshold voltage ranges from 2.0 V to 4.5 V. The device supports unclamped inductive switching and has a maximum junction temperature of 150°C. It features low package inductance, a fast intrinsic rectifier, and an isolated mounting screw hole for easy mounting. The thermal resistance from junction to case is 0.42 K/W.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH15N60 |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
