The IXFH32N50Q is an N-channel enhancement mode Power MOSFET designed for high-power switching applications, featuring a 500 V drain-source breakdown voltage, 32 A continuous drain current, and a maximum on-state resistance of 0.16 Ω at 25°C. It is packaged in a TO-247 AD case with a weight of 6 g and an operating junction temperature range of -55°C to 150°C. The device is avalanche rated, supports unclamped inductive switching with an energy rating of 45 mJ, and has a maximum dv/dt capability of 5 V/ns. Molding epoxies meet UL 94 V-0 flammability standards. Its low gate charge and capacitances enable faster switching and easier drive circuitry.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH32N50Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH32N50Q |
| Polarity | N-Channel |
