The IXFH44N50Q3 is an N-channel enhancement mode Power MOSFET with a drain-source voltage rating of 500 V and a continuous drain current of 44 A at 25°C. It features a low on-state resistance of 140 mΩ, a fast intrinsic rectifier with reverse recovery time ≤ 250 ns, and is avalanche rated. Housed in a TO-247 package, it has a maximum junction temperature of 150°C and thermal resistance from junction to case of 0.15 °C/W. The device supports high dv/dt performance up to 50 V/ns and is designed for use in DC-DC converters, battery chargers, switch-mode power supplies, and DC choppers.
The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device.Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings Low Rdson per silicon area Low Qg and Qgd Excellent dV/dt performance High Speed Switching Fast intrinsic Rectifier Low Intrinsic Gate Resistance High Avalanche Energy Capabilities Excellent Thermal Performance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH44N50Q3 |
| Product Name | 200V - 1100V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
