The IXBT14N300HV is a high-voltage BIMOSFET transistor designed for switch-mode and resonant-mode power supplies, uninterruptible power supplies, laser generators, capacitor discharge circuits, and AC switches. It features a TO-268HV package with a weight of 4.0 g and a maximum collector-emitter voltage of 3000 V. The device supports a continuous collector current of 14 A at 110°C and a peak pulse current of 120 A. It has a collector-emitter saturation voltage of 2.2 to 2.7 V at 14 A and 15 V gate-emitter voltage. The thermal resistance from junction to case is 0.62 °C/W. It includes an anti-parallel diode with a forward voltage of 2.7 V and a reverse recovery time of 1.4 µs. Operating junction temperature ranges from -55°C to 150°C.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBT14N300HV |
| Product Name | 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 3000 volts |
