The IXFK170N10P is an N-channel enhancement mode MOSFET designed for switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and motor drives. It is packaged in a TO-264 case, measuring 25.91 to 26.16 mm in length, 19.81 to 19.96 mm in width, and 20.32 to 20.83 mm in height. The device has a drain-source breakdown voltage of 100 V, a continuous drain current of 170 A at 25°C, and a pulsed drain current of 350 A. Its drain-source on-state resistance is 9 mΩ at 10 V gate-source voltage and 85 A drain current. The device is avalanche rated, features a fast intrinsic rectifier with a reverse recovery time of 150 ns, and has a thermal resistance junction-to-case of 0.15 °C/W. It operates from -55°C to 175°C junction temperature and meets the supply chain standard of being Pb-free and RoHS compliant.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK170N10P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
