The IXA55I1200HJ is a single IGBT designed for high-power applications such as AC motor drives, solar inverters, and uninterruptible power supplies. It is packaged in an ISOPLUS247 case with a backside DCB ceramic for improved thermal performance and a weight of 6 g. The device has a collector-emitter voltage rating of 1200 V and a continuous collector current of 84 A at 25°C, with a saturation voltage of 1.8 V at 50 A and 25°C. It is rated for a total power dissipation of 290 W, features a positive temperature coefficient of on-state voltage, and is short-circuit rated for 10 µs. The gate-emitter threshold voltage ranges from 5.5 to 6.5 V, and total gate charge is 190 nC. Thermal resistance from junction to case is 0.43 K/W. The device meets RoHS compliance and its epoxy molding compound is UL 94 V-0 rated.
Manufactured through the state-of-the-art GenX3™ IGBT process and an extreme-light Punch Through (XPT™) design platform, these devices feature high-current handling capabilities, high-speed switching abilities, low total energy losses, and low current fall times. They have a positive collector-to-emitter
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXA55I1200HJ |
| Product Name | 600V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs |
| VCES | 1200 volts |
