The IXBT16N170AHV is a 1700 V, 16 A BiMOSFET IGBT in a TO-268HV package, designed for high-voltage switch-mode and resonant-mode power supplies, UPS, and capacitor discharge circuits. It features a reverse-conducting diode, low conduction losses, and a maximum collector current of 16 A at 25°C dropping to 10 A at 90°C. The device has a collector-emitter saturation voltage of 6.0 V at 10 A and 15 V gate drive, with thermal resistance junction-to-case of 0.83 °C/W. Maximum junction temperature is 150 °C, and lead soldering temperature is 260 °C for 10 seconds. It meets RoHS standards and is housed in a plastic body with a weight of 4.0 g. Switching characteristics include a gate charge of 65 nC and turn-off energy of 2.6 mJ at 125 °C.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBT16N170AHV |
| Product Name | 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs |
| VCES | 1700 volts |
