The IXFH5N100P is an N-channel enhancement mode MOSFET with a 1000 V drain-source breakdown voltage, 5 A continuous drain current, and a maximum on-resistance of 2.8 Ω at 10 V gate drive. It is packaged in a TO-247 case, weighs 6.0 g, and features an avalanche-rated structure with fast intrinsic diode capability. The device is rated for junction temperatures from -55 °C to 150 °C and has a thermal resistance from junction to case of 0.25 °C/W. It meets the AEC-Q200 standard and is suitable for DC-DC converters, switched-mode power supplies, and high-speed switching applications.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH5N100P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
