Littelfuse, Inc. 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBT16N170A

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
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Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
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Datasheet
Datasheet Summary
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The IXBT16N170A is a 1700 V, 16 A BIMOSFET monolithic insulated gate bipolar transistor with a built-in fast reverse diode, designed for high-voltage switching applications such as AC motor control and uninterruptible power supplies. It is mounted in a TO-268 surface-mount package measuring 19.10 mm in length and 16.05 mm in width. The device supports a maximum collector current of 16 A at 25°C and 10 A at 90°C, with a peak pulsed current of 40 A. Its gate-emitter voltage rating is +20 V continuous and +30 V transient. The thermal resistance junction-to-case is 0.83 K/W. The part meets UL 94 V-0 flammability standards and operates from -55°C to +150°C. It features low switching losses, MOS gate drive simplicity, and high power density.

Datasheet Summary
Powered by GS/AI

The IXBT16N170A is a 1700 V, 16 A BIMOSFET monolithic insulated gate bipolar transistor with a built-in fast reverse diode, designed for high-voltage switching applications such as AC motor control and uninterruptible power supplies. It is mounted in a TO-268 surface-mount package measuring 19.10 mm in length and 16.05 mm in width. The device supports a maximum collector current of 16 A at 25°C and 10 A at 90°C, with a peak pulsed current of 40 A. Its gate-emitter voltage rating is +20 V continuous and +30 V transient. The thermal resistance junction-to-case is 0.83 K/W. The part meets UL 94 V-0 flammability standards and operates from -55°C to +150°C. It features low switching losses, MOS gate drive simplicity, and high power density.

Suppliers

Company
Product
Description
Supplier Links
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBT16N170A - Littelfuse, Inc.
Rosemont, IL, United States
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
IXBT16N170A
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBT16N170A
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages

Supplier's Site Datasheet
Singapore, Singapore
IGBT Transistor
279-IXBT16N170A
IGBT Transistor 279-IXBT16N170A
Insulated Gate Bipolar Transistor, Product overview: IXBT16N170A from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBT16N170A can be used for catalog matching and distributor lookup.

Insulated Gate Bipolar Transistor, Product overview: IXBT16N170A from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXBT16N170A can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBT16N170A 279-IXBT16N170A
Product Name 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IGBT Transistor
VCES 1700 volts
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