The IXFK110N07 is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, synchronous rectification, and switched-mode power supplies. It is packaged in a TO-264 AA case measuring 26.16 mm maximum length, 19.96 mm width, and 20.83 mm height. The device has a drain-source breakdown voltage of 70 V, a continuous drain current of 110 A at 25°C, and a pulsed drain current of 600 A limited by the case temperature. It features a maximum on-resistance of 6 mΩ at 10 V gate-source voltage and 25°C, a gate charge of 240 nC, and an avalanche energy rating of 2 J. The MOSFET is rated for junction temperatures from -55°C to 150°C, meets UL 94 V-0 flammability requirements, and incorporates a fast intrinsic rectifier diode with a forward voltage of 1.7 V at 100 A. It is rated for unclamped inductive switching and has low package inductance.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
MOSFET N-CH 70V 110A TO264AA
| Littelfuse, Inc. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | IXFK110N07 | 1294-IXFK110N07-CHP |
| Product Name | 60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
