The IXFB70N60Q2 is an N-channel enhancement mode MOSFET designed for high-frequency switching applications such as DC-DC converters, resonant-mode power supplies, and laser drivers. It is packaged in a PLUS264TM case with a weight of 10 g and is rated for a drain-source voltage of 600 V and a continuous drain current of 70 A at 25°C. The device features a typical on-resistance of 88 mΩ at 10 V gate voltage and 35 A drain current, an avalanche energy rating of 5 J, and a fast intrinsic rectifier with a reverse recovery time of 250 ns. The MOSFET is avalanche rated, has low gate charge and package inductance, and supports a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.14 °C/W.
Q2 Class HiPerFET™ MOSFETs feature switching efficiencies that enable high frequency operation and small power supplies. These devices combine the advantages of a low gate charge with a double-metal construction, resulting in a line of MOSFETs with an intrinsic gate resistance that is much lower than seen in conventional MOSFETs.Advantages: Easy to mount High power density Space savings International standard packages Double metal process for low gate resistance Avalanche energy and current rated Fast intrinsic rectifier Low package inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFB70N60Q2 |
| Product Name | 500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
