The IXFH34N65X3 is a 650V N-channel enhancement mode MOSFET in a TO-247 package, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It has a maximum continuous drain current of 34A at 25°C and a drain-source on-resistance of 100mΩ at 10V gate voltage and 34A drain current. The device is avalanche rated with an energy rating of 750mJ at 25°C and a maximum dv/dt of 50V/ns. The gate charge is 29nC, and the reverse recovery time of the body diode is 150ns. Thermal resistance from junction to case is 0.28°C/W. The operating junction temperature range is -55°C to 150°C. The device features low package inductance, low RDS(on), and low gate charge for improved efficiency and power density.
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr) On-state resistance: RDS(ON) = 100mΩ Reverse recovery time: trr = 150ns Thermal resistance: RthJC = 0.28K/W Avalanche rating: EAS = 750mJ Gate charge: Qg = 29nC
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH34N65X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
