The CPC3982 is an N-channel depletion-mode FET designed for high-voltage power applications, including ignition modules and solid state relays. It is packaged in an SOT-23 case with dimensions conforming to JEDEC TO-236AB. The device has a minimum drain-source breakdown voltage of 800 V, a gate-to-source off voltage range of -1.4 V to -3.1 V, and a static drain-source on-state resistance of 380 Ω at 20 mA drain current. It operates over a junction temperature range of -55 °C to 125 °C, with a maximum total package dissipation of 0.4 W. The device is moisture sensitive level 1 and meets IPC/JEDEC J-STD-020 and J-STD-033 handling standards. It is ESD sensitive and complies with JESD-625. Thermal impedance junction-to-ambient is 250 °C/W.
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | CPC3982 |
| Product Name | N-channel depletion mode field effect transistors (FET) |
| Polarity | N-Channel |
