Littelfuse, Inc. N-channel depletion mode field effect transistors (FET) CPC3982

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223