- Trained on our vast library of engineering resources.

Littelfuse, Inc. Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump IX4351NEAU

Description
The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. Desaturation detection circuitry detects an over current condition of the SiC-MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller. The IX4351NEAU is AEC-Q100 Grade 1 rated for an operational ambient temperature range of -40°C to +125°C and is available in a thermally enhanced 16-pin narrow SOIC package.Features & Benefits: Matched rise and fall times Low propagation delay Wide operating voltage range
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump - IX4351NEAU - Littelfuse, Inc.
Chicago, IL, United States
Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump
IX4351NEAU
Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump IX4351NEAU
The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. Desaturation detection circuitry detects an over current condition of the SiC-MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller. The IX4351NEAU is AEC-Q100 Grade 1 rated for an operational ambient temperature range of -40°C to +125°C and is available in a thermally enhanced 16-pin narrow SOIC package.Features & Benefits: Matched rise and fall times Low propagation delay Wide operating voltage range

The IX4351NE is designed specifically to drive SiC-MOSFETs and high power IGBTs. Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. Desaturation detection circuitry detects an over current condition of the SiC-MOSFET and initiates a soft turn off, thus preventing a potentially damaging dV/dt event. The logic input is TTL and CMOS compatible; this input does not need to be level shifted even with a negative gate drive bias voltage. Protection features include UVLO and thermal shutdown detection. An open drain FAULT output signals a fault condition to the microcontroller. The IX4351NEAU is AEC-Q100 Grade 1 rated for an operational ambient temperature range of -40°C to +125°C and is available in a thermally enhanced 16-pin narrow SOIC package.Features & Benefits: Matched rise and fall times Low propagation delay Wide operating voltage range

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IX4351NEAU
Product Name Ultrafast low-side SiC-MOSFET and IGBT driver with negative voltage charge pump
Package Type 16-pin power SOIC with exposed thermal pad
Unlock Full Specs
to access all available technical data

Similar Products

Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH80N65B4H1 - Littelfuse, Inc.
Specs
VCES 650 volts
VCE(on) 2.1 volts
IC(max) 160 amps
View Details
2 suppliers
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFN170N25X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 250 volts
IDSS 170000 milliamps
View Details
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK66N50Q2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 500 volts
IDSS 66000 milliamps
View Details
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBA16N170AHV - Littelfuse, Inc.
Specs
VCES 1700 volts
VCE(on) 6 volts
IC(max) 16 amps
View Details