The IXFH80N20Q is an N-channel enhancement mode power MOSFET designed for high-current switching applications, featuring a 200 V drain-source breakdown voltage and 80 A continuous drain current. It is packaged in a TO-247 AD case, measuring 20.32 mm in height and 15.87 mm in width, with a mounting torque of 1.13 Nm. The device has a maximum on-state resistance of 28 mΩ at 10 V gate voltage and a thermal resistance from junction to case of 0.35 K/W. It is rated for 45 mJ unclamped inductive switching energy and sustains avalanche currents up to 80 A. The package meets UL 94 V-0 flammability standards and is rated for operation from -55 °C to 150 °C. The device supports high dv/dt up to 5 V/ns and includes a fast intrinsic rectifier with 200 ns reverse recovery time.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH80N20Q |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Q-Class - IXFH80N20Q |
| Polarity | N-Channel |
