- Trained on our vast library of engineering resources.

Littelfuse, Inc. 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations FDM47-06KC5

Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations - FDM47-06KC5 - Littelfuse, Inc.
Chicago, IL, United States
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations
FDM47-06KC5
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations FDM47-06KC5
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDM47-06KC5
Product Name 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH50N85X - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 850 volts
IDSS 50000 milliamps
View Details
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFK240N25X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 250 volts
IDSS 240000 milliamps
View Details
2 suppliers
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFN38N100Q2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1000 volts
IDSS 38000 milliamps
View Details
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH36N60X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 36000 milliamps
View Details