These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG. Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | FDM47-06KC5 |
| Product Name | 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations |
| Polarity | N-Channel |
