The IXFA38N30X3 is an N-channel enhancement mode power MOSFET rated for 300 V drain-to-source voltage and 38 A continuous drain current, designed for switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 surface-mount format with a case size of 10.92 mm × 9.65 mm × 4.83 mm and weighs 2.5 g. The device has a maximum on-resistance of 50 mΩ at 25°C and 10 V gate drive, and an avalanche energy rating of 400 mJ. It is rated for junction temperatures from -55°C to 150°C and meets IEC 60286-3 standards for surface mount soldering. The package is avalanche-rated, features low gate charge and low package inductance, and complies with RoHS.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA38N30X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
