- Trained on our vast library of engineering resources.

Littelfuse, Inc. 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH75N10Q

Description
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH75N10Q - Littelfuse, Inc.
Chicago, IL, United States
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFH75N10Q
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFH75N10Q
The Q-Class series devices are popular Power MOSFETs (HiPerFETâ„¢) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types. Features: International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications: DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages: Easy assembly High Power density Space savings

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH75N10Q
Product Name 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 75000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH72N30X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 72000 milliamps
View Details
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK80N20 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 200 volts
IDSS 80000 milliamps
View Details
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH94N30P3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 94000 milliamps
View Details
3 suppliers
600V - 700V Power MOSFETs with HiPerFET™ Options - IXFK80N65X2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 80000 milliamps
View Details