The IXFA60N25X3 is an N-channel enhancement mode MOSFET for high-power switching applications, including switch-mode power supplies and motor drives. Packaged in a TO-263 case, it weighs 2.5 g with a drain tab. It has a 250 V drain-source breakdown voltage and a continuous drain current of 60 A at 25°C. Its maximum on-resistance is 23 mΩ at V_GS = 10 V and I_D = 30 A. The device is avalanche rated with a single-pulse energy rating of 700 mJ at T_C = 25°C. The body diode has a reverse recovery charge of 380 nC and a forward voltage of 1.4 V. It supports a maximum dv/dt of 20 V/ns and operates from -55°C to +150°C. Thermal resistance from junction to case is 0.39 °C/W. The package is an international standard with low inductance and easy mounting.
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA60N25X3 |
| Product Name | 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
