The IXFK120N20 is a 200 V, 120 A N-channel silicon MOSFET in a TO-264 AA package, designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor control. It features a maximum on-state resistance of 17 mΩ at 25°C, a continuous drain current rating of 76 A at 104°C case temperature, and an unclamped inductive switching energy rating of 3 J. The device has a thermal resistance from junction to case of 0.22 K/W and is rated for junction temperatures from -55°C to 150°C. It includes a fast intrinsic body diode with a reverse recovery time of 250 ns and meets industry standards for ruggedness and reliability. The package is optimized for low inductance and easy mounting with clip or spring contacts.
The N-Channel HiPerFET™ Standard series includes popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. This series is available in many standard industrial packages including isolated types.Advantages: Easy to mount Space savings High power density International Standard Packages High Current Handling Capability Low RDS(on) HDMOS process Avalanche Rated Low Package Inductance Fast intrinsic diode
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFK120N20 |
| Product Name | Power Semiconductors & Control ICs - MOSFETs (Si/SiC) - N-Channel HiPerFETs - Series: Standard - IXFK120N20 |
| Polarity | N-Channel |
