Littelfuse, Inc. 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBF22N300

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
  • 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs - IXBF22N300 - Littelfuse, Inc.
    Littelfuse, Inc.
Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation
Datasheet
Datasheet Summary
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The IXBF22N300 is a high-voltage, high-gain BiMOSFET designed for switch-mode and resonant-mode power supplies, UPS, and capacitor discharge circuits. It features an ISOPLUS i4-Pak package with an electrically isolated tab, measures 5 grams, and provides 4000 V~ electrical isolation. The device has a collector-to-emitter breakdown voltage of 3000 V, a continuous collector current rating of 22 A at 90°C, and a peak pulse current of 165 A. Its saturation voltage is 2.2 to 2.7 V at 22 A and 15 V gate drive. Thermal resistance from junction to case is 0.83 °C/W, and junction temperature ranges from -55 to 150 °C. The package supports a maximum lead soldering temperature of 300 °C for 10 seconds and requires a mounting force of 20 to 120 N.

Datasheet Summary
Powered by GS/AI

The IXBF22N300 is a high-voltage, high-gain BiMOSFET designed for switch-mode and resonant-mode power supplies, UPS, and capacitor discharge circuits. It features an ISOPLUS i4-Pak package with an electrically isolated tab, measures 5 grams, and provides 4000 V~ electrical isolation. The device has a collector-to-emitter breakdown voltage of 3000 V, a continuous collector current rating of 22 A at 90°C, and a peak pulse current of 165 A. Its saturation voltage is 2.2 to 2.7 V at 22 A and 15 V gate drive. Thermal resistance from junction to case is 0.83 °C/W, and junction temperature ranges from -55 to 150 °C. The package supports a maximum lead soldering temperature of 300 °C for 10 seconds and requires a mounting force of 20 to 120 N.

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2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs - IXBF22N300 - Littelfuse, Inc.
Littelfuse, Inc.
Rosemont, IL, United States
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs
IXBF22N300
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBF22N300
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Free intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4 kV electrical isolation

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Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBF22N300
Product Name 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs
VCES 3000 volts
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