The IXFH40N30Q is an N-channel enhancement mode MOSFET in a TO-247 package, rated for 300 V drain-source voltage and 40 A continuous drain current. It has a maximum on-state resistance of 85 mΩ at 10 V gate-source voltage and 25°C, with a gate charge of 140 nC and thermal resistance junction-to-case of 0.42 °C/W. The device is avalanche-rated, supports a 160 A peak pulse current, and includes a fast intrinsic body diode with a 250 ns reverse recovery time. Operating temperature ranges from -55°C to 150°C. It is designed for DC-DC converters, battery chargers, and switch-mode power supplies, with low gate resistance and package inductance for high dv/dt operation. The package weighs 6 g and requires 1.13 Nm mounting torque.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH40N30Q |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
