The IXFH12N90Q is an N-channel enhancement mode Power MOSFET rated for 900 V drain-source voltage and 12 A continuous drain current, designed for high-power switching applications. It is packaged in a TO-247 AD case, measuring 20.32 mm in length, 21.46 mm in width, and 4.5 mm in height, with a mounting torque rating of 1.13 Nm. The device features a maximum on-state resistance of 0.9 Ω, a gate charge of 90 nC, and an avalanche energy rating of 30 mJ. It is rated for unclamped inductive switching (UIS), has an avalanche current rating of 12 A, and operates with a junction temperature range of -55°C to 150°C. The molding compound meets UL 94 V-0 flammability standards.
The Q-Class series devices are popular Power MOSFETs (HiPerFET™) for both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode. They are available in many standard industrial packages including isolated types.Advantages: Easy assembly High Power density Space savings International standard packages Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH12N90Q |
| Product Name | 100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
