The IXBF40N160 is a high-voltage BiMOSFET designed for switch-mode power supplies, DC-DC converters, and resonant converters, featuring a 1600 V blocking voltage and 28 A continuous collector current. It is housed in an ISOPLUS i4-PAC package with a 9 g weight and supports an isolated back surface for heatsinking. The device has a maximum collector-emitter saturation voltage of 7.1 V at 25°C, a gate threshold voltage range of 4 to 8 V, a gate charge of 130 nC, and a thermal resistance from junction to case of 0.5 K/W. It meets the AEC-Q200 qualification standard and is rated for junction temperatures up to 150°C with a storage temperature range of -55°C to 150°C.
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages
| Littelfuse, Inc. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | IXBF40N160 |
| Product Name | Power Semiconductors & Control ICs - IGBTs - BiMOSFET - Series: High Voltage - IXBF40N160 |
| VCES | 1600 volts |
