The IXFA16N50P is an N-channel enhancement mode MOSFET rated for 500 V drain-source voltage and 16 A continuous drain current, designed for switch-mode power supplies, DC-DC converters, PFC circuits, and motor drives. It is packaged in a TO-263 case with a weight of 2.5 g and features a maximum on-state resistance of 400 mΩ at 25°C. The device is avalanche rated, with a single-pulse avalanche energy rating of 750 mJ and a maximum dv/dt of 10 V/ns. It meets international standard packaging requirements and has low gate charge, low package inductance, and a thermal junction-to-case resistance of 0.42 °C/W. Operating junction temperature ranges from -55 °C to 150 °C.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG andRDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFA16N50P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
