Littelfuse, Inc. 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH86N30T

Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Description
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
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Datasheet
Datasheet Summary
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The IXFH86N30T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-247 case with dimensions of 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and a mass of 6.0 g. The device has a drain-source breakdown voltage of 300 V, a continuous drain current of 86 A at 25°C, and a maximum pulsed drain current of 190 A. Its on-resistance is 46 mΩ at 10 V gate voltage and 43 A drain current. The MOSFET is avalanche rated, features a fast intrinsic rectifier, and has a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.21 °C/W. It meets the requirements of AEC-Q200 and is RoHS compliant.

Datasheet Summary
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The IXFH86N30T is an N-channel enhancement mode MOSFET designed for high-power switching applications such as DC-DC converters, battery chargers, and AC motor drives. It is packaged in a TO-247 case with dimensions of 20.80 to 21.46 mm in length, 15.75 to 16.26 mm in width, and a mass of 6.0 g. The device has a drain-source breakdown voltage of 300 V, a continuous drain current of 86 A at 25°C, and a maximum pulsed drain current of 190 A. Its on-resistance is 46 mΩ at 10 V gate voltage and 43 A drain current. The MOSFET is avalanche rated, features a fast intrinsic rectifier, and has a maximum junction temperature of 150°C. Thermal resistance from junction to case is 0.21 °C/W. It meets the requirements of AEC-Q200 and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFH86N30T - Littelfuse, Inc.
Rosemont, IL, United States
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options
IXFH86N30T
55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options IXFH86N30T
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXFH86N30T
MOSFET Transistor 278-IXFH86N30T
Power Field-Effect Transistor, Product overview: IXFH86N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH86N30T can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXFH86N30T from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFH86N30T can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFH86N30T 278-IXFH86N30T
Product Name 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options MOSFET Transistor
Polarity N-Channel
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