The IXFH100N25P is an N-channel enhancement mode Power MOSFET with a 250 V drain-source breakdown voltage and a continuous drain current of 100 A at 25°C, designed for high-power switching applications. It is packaged in a TO-247 case with a weight of 5.5 g and includes a fast intrinsic diode with a reverse recovery time of 200 ns. The device is avalanche rated with an energy rating of 60 mJ for single pulse and 2.0 J for single shot, and features a low on-resistance of 27 mΩ at 10 V gate drive. It meets RoHS standards and is qualified for operation from -55°C to +150°C junction temperature with a thermal resistance of 0.21 °C/W from junction to case.
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXFH100N25P |
| Product Name | 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) |
| Polarity | N-Channel |
